note: 1. measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. 2. a protection diode is built-in between gate and source of transistor. however if forward current flows between gate and source transistor might be damaged. so please be careful not insert reverse. 3. *1 id is assured for idss. *2 nv is assured for design. *3 |gv . f | is assured for aql 0.065. (the measurement method is used by source-grounded circuit. ) *4 rank classification embossed type (thermo-compression sealing) : 10 000 pcs / reel -1.0 co = 5 pf, eg = 10 mv voltage gain difference *3 voltage gain difference gv2 voltage gain gv1 vdd = 2.0 v, rd = 2.2 k *2 a 460 mutual conductance gm vds = 2.0 v, vgs = 0, f = 1 khz 660 tsssmini3-f2-b vgs = 0 idss drain-source current *4 package code : c c drain-gate voltage(source open) +80 -20 rank t u topr co = 5 pf, a-curve f = 1 khz to 70 hz co = 5 pf, eg = 10 mv, f = 1 khz to nv storage temperature id 180 to 320 2.0 0 tstg -55 to +150 1 500 semiconductor company panasonic corporation 2010.05.31 2010.7.29 prepared revised tentative DSKTJ08 total pages page v unit drain-source voltage(gate open) vdso 20 v vdgo 20 absolute maximum ratings ta = 25 c parameter symbol rating DSKTJ08 silicon n-channel junction fet for af impedance converter marking symbol : ct, cu ma drain-gate current(source open) idgo 2 ma drain-source current(gate open) idso 2 typ max pd 100 mw electrical characteristics ta = 25 c3 c parameter symbol power dissipation operating ambient temperature unit drain current * 1 ,* 4 id vdd = 2.0 v, rd = 2.2 k a conditions min s vdd = 2.0 v, rd = 2.2 k v 10 co = 5 pf, eg = 10 mv, f = 1 khz -5.0 1.7 0 vdd = 1.5 v, rd = 2.2 k gv1-gv2 280 to | gv ? f | pin name 1. drain 2. source 3. gate packing code t u marking symbo cu ct 290 idss 190
tsssmini3-f2-b unit: mm 0 . 8 0 0 . 0 5 ( 0 . 4 0 ) ( 0 . 4 0 ) 0 . 3 3 1 . 2 0 0 . 0 5 0 . 8 0 0 . 0 5 0 . 2 3 1 . 2 0 0 . 0 5 3 1 2 0 . 1 5 m a x . 5 0 . 0 1 0 . 0 1 0 . 0 8 0 . 1 5 m i n . +0.05 -0.02 +0.05 -0.02 +0.05 -0.02 5 0 . 3 3 m a x .
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